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Advance Technical Information
Polar3TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3
VDSS ID25
RDS(on)
= 600V = 50A 145m
TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
Maximum Ratings 600 600 30 40 50 125 25 1 35 1040 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W C C C C C Nm/lb.in. g g g Features Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages High Power Density Easy to Mount Space Savings V 5.0 100 TJ = 125C V nA Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls G = Gate S = Source G D S D (Tab) D = Drain Tab = Drain G D S
D (Tab)
TO-247 (IXFH)
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247 & TO-3P) TO-268 TO-3P TO-247
300 260 1.13 / 10 4.0 5.5 6.0
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = 30V, VDS = 0V VDS = VDSS, VGS= 0V
Characteristic Values Min. Typ. Max. 600 3.0
25 A 2 mA 145 m
VGS = 10V, ID = 0.5 * ID25, Note 1
(c) 2011 IXYS CORPORATION, All Rights Reserved
DS100310(03/11)
IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS (TO-247 & TO-3P) 0.25 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 0.5 * ID25, Note 1 Characteristic Values Min. Typ. Max. 32 55 6300 630 2.5 1.0 31 20 62 17 94 27 23 S pF pF pF ns ns ns ns nC nC nC 0.12 C/W C/W TO-3P Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS ISM VSD trr IRM QRM Note VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 25A, -di/dt = 100A/s VR = 100V, VGS = 0V 1. Pulse test, t 300s, duty cycle, d 2%.
e
Characteristic Values Min. Typ. Max. 50 200 1.4 250 11 1.1 A A V ns A C
1 2 3
TO-247 Outline
P
TO-263 Outline
Terminals: 1 - Gate 3 - Source
2 - Drain
Dim.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3
Fig. 1. Output Characteristics @ T J = 25C
50 45 40 35 VGS = 10V 7V 100 90 80 70 7V VGS = 10V 8V
Fig. 2. Extended Output Characteristics @ T J = 25C
ID - Amperes
30 6V 25 20 15 10 5 0 0 1 2 3 4 5 6 7 5V
ID - Amperes
60 50 40 6V 30 20 10 0 0 5 10 15 20 25 30 5V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125C
50 45 40 35 VGS = 10V 7V 3.4 3.0 2.6 2.2 1.8 1.4 1.0 0.6 4V 0 0 2 4 6 8 10 12 14 16 18 0.2 -50
Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature
VGS = 10V
30 25 20 15 10 5 5V
R DS(on) - Normalized
6V
I D = 50A
ID - Amperes
I D = 25A
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Drain Current
3.0 VGS = 10V 2.6 TJ = 125C 50 60
Fig. 6. Maximum Drain Current vs. Case Temperature
R DS(on) - Normalized
2.2
40
ID - Amperes
TJ = 25C 0 10 20 30 40 50 60 70 80 90 100
1.8
30
1.4
20
1.0
10
0.6
0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3
Fig. 7. Input Admittance
80 70 100 60 TJ = 125C 25C - 40C 120 TJ = - 40C
Fig. 8. Transconductance
g f s - Siemens
80
ID - Amperes
50 40 30 20
25C
60 125C 40
20 10 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 0 10 20 30 40 50 60 70 80
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
10 140 120 100 9 8 7 VDS = 300V I D = 25A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 125C TJ = 25C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100
80 60 40 20 0
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
10,000 Ciss 1000
Fig. 12. Forward-Bias Safe Operating Area
Capacitance - PicoFarads
1,000 100
RDS(on) Limit
100
ID - Amperes
Coss
100s 10
10 Crss
TJ = 150C
f = 1 MHz
1 0 5 10 15 20 25 30 35 40 1 10
TC = 25C Single Pulse 1ms 100 1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3
Fig. 13. Maximum Transient Thermal Impedance
1
Fig. 13. Maximum Transient Thermal Impedance
0.2 AAAAA
0.1
Z(th)JC - C / W
0.01
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_50N60P3(W8)03-10-11

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